Toshiyuki IWAMOTO

Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
high-κ gate dielectricaluminum oxideplasma nitridationfixed chargeMOSFET performance
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