Toshiro NAKANISHI


Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications
Kouji TSUNODA Akira SATO Hiroko TASHIRO Toshiro NAKANISHI Hitoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: Memory
Keyword: 
system-on-a-chipembedded RAMdirect tunnelingtunnel oxidegate depletion
 Summary | Full Text:PDF(704.3KB)

Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning
Yasuhisa SATO Rinshi SUGINO Masaki OKUNO Toshiro NAKANISHI Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/01/25
Vol. E76-C  No. 1  pp. 41-46
Type of Manuscript:  Special Section PAPER (Special Issue on Opto-Electronics and LSI)
Category: Opto-Electronics Technology for LSIs
Keyword: 
dry cleaningdielectric breakdownFowler-Nordheim leakage currentjunction leakage currentmetal contamination
 Summary | Full Text:PDF(582.2KB)