Toshio HIGASHI


Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
Toshio HIGASHI Tsuyoshi YAMAMOTO Tsutomu ISHIKAWA Takuya FUJII Haruhisa SODA Minoru YAMADA 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2001/05/01
Vol. E84-B  No. 5  pp. 1274-1281
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Keyword: 
semiconductor lasergaintemperaturethreshold currentoscillation wavelength
 Summary | Full Text:PDF

Temperature Dependence of Gain Characteristics in 1.3-µm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers
Toshio HIGASHI Tsuyoshi YAMAMOTO Tsutomu ISHIKAWA Takuya FUJII Haruhisa SODA Minoru YAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/05/01
Vol. E84-C  No. 5  pp. 648-655
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Category: Optical Active Devices and Modules
Keyword: 
semiconductor lasergaintemperaturethreshold currentoscillation wavelength
 Summary | Full Text:PDF