IEICE Trans

Toshihiro SUGII

STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier Yohei UMEKI Koji YANAGIDA Shusuke YOSHIMOTO Shintaro IZUMI Masahiko YOSHIMOTO Hiroshi KAWAGUCHI Koji TSUNODA Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2014/12/01 Vol. E97-A No. 12 pp. 2411-2417 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Circuit Design Keyword: STT-MRAM, low-voltage, process-variation-tolerant,
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Electrical Properties of SiN/HfO₂/SiON Gate Stacks with High Thermal Stability Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 37-43 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ, HfO₂, gate dielectric, thermal stability,
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High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage Tetsu TANAKA Youichi MOMIYAMA Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 pp. 538-543 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Silicon Devices Keyword: SOI, DTMOS, F_t, F_max, low power,
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Theoretical Study of Alpha-Particle-lnduced Soft Errors in Submicron SOI SRAM Yoshiharu TOSAKA Kunihiro SUZUKI Shigeo SATOH Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/06/25 Vol. E79-C No. 6 pp. 767-771 Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology) Category: Static RAMs Keyword: soft errors, SOI SRAM, α-particle-induced bipolar current, critical α-particle-induced initial charge, soft error rate,
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High-Speed and Low-Power n⁺-p⁺ Double-Gate SOI CMOS Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/04/25 Vol. E78-C No. 4 pp. 360-367 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Device Technology Keyword: MOSFET, SOI, double-gate, high-speed, low-power, threshold voltage,
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Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices Yasuo NARA Manabu DEURA Ken-ichi GOTO Tatsuya YAMAZAKI Tetsu FUKANO Toshihiro SUGII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/03/25 Vol. E78-C No. 3 pp. 293-298 Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies) Category: Keyword: deep submicron, CMOS, gate resistance, salicide, propagation delay time, SPICE,
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Ti Salicide Process for Subquarter-Micron CMOS Devices Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-C No. 3 pp. 480-485 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: Ti, TiSi₂, salicide, subquarter-micron CMOS, gate resistance,
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High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques Manabu KOJIMA Atsushi FUKURODA Tetsu FUKANO Naoshi HIGAKI Tatsuya YAMAZAKI Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/25 Vol. E76-C No. 4 pp. 572-576 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Device Technology Keyword: SOI bipolar transistors, thin buried layer, wafer bonding, selective polishing,
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A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/25 Vol. E75-C No. 12 pp. 1453-1458 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI Devices Keyword: bonded SOI, lateral bipolar, sidewall self-aligning base, BiCMOS, recrystallization,
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