Toshihiro SUGII


STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier
Yohei UMEKI Koji YANAGIDA Shusuke YOSHIMOTO Shintaro IZUMI Masahiko YOSHIMOTO Hiroshi KAWAGUCHI Koji TSUNODA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/12/01
Vol. E97-A  No. 12  pp. 2411-2417
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
STT-MRAMlow-voltageprocess-variation-tolerant
 Summary | Full Text:PDF

Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 37-43
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κHfO2gate dielectricthermal stability
 Summary | Full Text:PDF

High Frequency Characteristics of Dynamic Threshold-Voltage MOSFET (DTMOS) under Ultra-Low Supply Voltage
Tetsu TANAKA Youichi MOMIYAMA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 538-543
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
SOIDTMOSFtFmaxlow power
 Summary | Full Text:PDF

Theoretical Study of Alpha-Particle-lnduced Soft Errors in Submicron SOI SRAM
Yoshiharu TOSAKA Kunihiro SUZUKI Shigeo SATOH Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 767-771
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Static RAMs
Keyword: 
soft errorsSOI SRAM, α-particle-induced bipolar currentcritical α-particle-induced initial chargesoft error rate
 Summary | Full Text:PDF

High-Speed and Low-Power n+-p+ Double-Gate SOI CMOS
Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 360-367
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
MOSFETSOIdouble-gatehigh-speedlow-powerthreshold voltage
 Summary | Full Text:PDF

Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices
Yasuo NARA Manabu DEURA Ken-ichi GOTO Tatsuya YAMAZAKI Tetsu FUKANO Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
deep submicronCMOSgate resistancesalicidepropagation delay timeSPICE
 Summary | Full Text:PDF

Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 480-485
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
TiTiSi2salicidesubquarter-micron CMOSgate resistance
 Summary | Full Text:PDF

High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA Atsushi FUKURODA Tetsu FUKANO Naoshi HIGAKI Tatsuya YAMAZAKI Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI bipolar transistorsthin buried layerwafer bondingselective polishing
 Summary | Full Text:PDF

A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1453-1458
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOIlateral bipolarsidewall self-aligning baseBiCMOSrecrystallization
 Summary | Full Text:PDF