Toshihiko MAKINO


Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process
Akihiko KASUKAWA Masayuki IWASE Narihito MATSUMOTO Toshihiko MAKINO Susumu KASHIWA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/09/25
Vol. E71-E  No. 9  pp. 837-839
Type of Manuscript:  LETTER
Category: Quantum Electronics
Keyword: 
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