Toshihide SUZUKI

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier, 
 Summary | Full Text:PDF
300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 528-534
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
InP HEMT, sub millimeter-wave, on-wafer TRL calibration, 
 Summary | Full Text:PDF
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Vol. E98-C  No. 12  pp. 1112-1119
Type of Manuscript:  Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World)
Category: 
Keyword: 
millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis, 
 Summary | Full Text:PDF
A 24 dB Gain 51–68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors
Ning LI Keigo BUNSEN Naoki TAKAYAMA Qinghong BU Toshihide SUZUKI Masaru SATO Yoichi KAWANO Tatsuya HIROSE Kenichi OKADA Akira MATSUZAWA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/02/01
Vol. E95-A  No. 2  pp. 498-505
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
asymmetric-layout, low noise amplifier, mm-Wave, 60 GHz, 
 Summary | Full Text:PDF
Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI Yasuhiro NAKASHA Hideki KANO Masaru SATO Satoshi MASUDA Ken SAWADA Kozo MAKIYAMA Tsuyoshi TAKAHASHI Tatsuya HIROSE Naoki HARA Masahiko TAKIGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1916-1922
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
InP HEMT, MUX, DEMUX, D-FF, amplifier, ultra high speed, optical communication system, 
 Summary | Full Text:PDF