Toshihide KIKKAWA

High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
GaNHEMTbase stationamplifierW-CDMA
 Summary | Full Text:PDF(1.6MB)

InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
InGaP-channel FEThigh breakdown voltagehigh operating voltagelow distortion
 Summary | Full Text:PDF(603KB)