Toshiaki NAGAI


Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
Masafumi TSUTSUI Toshiaki NAGAI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1191-1199
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
vertical transistorSchottky barrierSchottky source/drain transistorPtSisilicide
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