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Toru TATSUMI
Suppression of Charges in Al
2
O
3
Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE
Kazuhiko ENDO
Satoshi KAMIYAMA
Toshiyuki IWAMOTO
Takashi OGURA
Nobuyuki IKARASHI
Toyoji YAMAMOTO
Toru TATSUMI
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
2004/01/01
Vol.
E87-C
No.
1
pp.
30-36
Type of Manuscript:
Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category:
Keyword:
high-κ gate dielectric
,
aluminum oxide
,
plasma nitridation
,
fixed charge
,
MOSFET performance
,
Summary
|
Full Text:PDF
(953.8KB)
Uniform Raised-Salicide Technology for High-Performance CMOS Devices
Hitoshi WAKABAYASHI
Takeshi ANDOH
Tohru MOGAMI
Toru TATSUMI
Takemitsu KUNIO
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
2002/05/01
Vol.
E85-C
No.
5
pp.
1104-1110
Type of Manuscript:
Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category:
Keyword:
complementary metal oxide semiconductor
,
salicide
,
raised salicide
,
silicon selective epitaxial growth
,
pit
,
Summary
|
Full Text:PDF
(2MB)
7-Mask Self-Aligned SiGe Base Bipolar Transistors with
f
T
of 80 GHz
Tsutomu TASHIRO
Takasuke HASHIMOTO
Fumihiko SATO
Yoshihiro HAYASHI
Toru TATSUMI
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
1997/05/25
Vol.
E80-C
No.
5
pp.
707-713
Type of Manuscript:
PAPER
Category:
Integrated Electronics
Keyword:
bipolar transistor
,
silicon-germanium base
,
selective epitaxial growth
,
CMP
,
trench isolation
,
f
T
,
Summary
|
Full Text:PDF
(624.6KB)