Toru TATSUMI

Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectric, aluminum oxide, plasma nitridation, fixed charge, MOSFET performance, 
 Summary | Full Text:PDF(953.8KB)
Uniform Raised-Salicide Technology for High-Performance CMOS Devices
Hitoshi WAKABAYASHI Takeshi ANDOH Tohru MOGAMI Toru TATSUMI Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1104-1110
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
complementary metal oxide semiconductor, salicide, raised salicide, silicon selective epitaxial growth, pit, 
 Summary | Full Text:PDF(2MB)
7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5  pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistor, silicon-germanium base, selective epitaxial growth, CMP, trench isolation, fT, 
 Summary | Full Text:PDF(624.6KB)