Toru KANAZAWA


Type-II HfS2/MoS2 Heterojunction Transistors
Seiko NETSU Toru KANAZAWA Teerayut UWANNO Tomohiro AMEMIYA Kosuke NAGASHIO Yasuyuki MIYAMOTO 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 338-342
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
TMDCMoS2HfS2tunnel FETheterojunction
 Summary | Full Text:PDF

Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
Vikrant UPADHYAYA Toru KANAZAWA Yasuyuki MIYAMOTO 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 453-457
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
HfS2field effect transistorsenvironmental degradationpassivationPMMAvacuum annealing
 Summary | Full Text:PDF

Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 904-909
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
back-sourceMOSFETInGaAsBCBbonding
 Summary | Full Text:PDF