Tomoya SUGAHARA


Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates
Tomoya SUGAHARA Shiro SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 598-604
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
dislocationhomoepitaxyheteroepitaxynonradiative recombination centerphase separationband-tail states
 Summary | Full Text:PDF

Optical Properties of Bound Excitons and Biexcitons in GaN
Yoichi YAMADA Chiharu SASAKI Yohei YOSHIDA Satoshi KURAI Tsunemasa TAGUCHI Tomoya SUGAHARA Katsushi NISHINO Shiro SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 605-611
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
bound excitonbiexcitonZeeman splittingdiamagnetic shifttime-resolved luminescence
 Summary | Full Text:PDF