Tetsuzo UEDA

K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
Noboru NEGORO Masayuki KURODA Tomohiro MURATA Masaaki NISHIJIMA Yoshiharu ANDA Hiroyuki SAKAI Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1327-1331
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN, 
 Summary | Full Text:PDF
Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancement, GaN, MOSFETs, HfO2, 
 Summary | Full Text:PDF