Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1001-1003 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: enhancement, GaN, MOSFETs, HfO2,