Tetsuya GOTO


Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
 Summary | Full Text:PDF

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 535-540
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
LaB6OFETbottom-contactpentacenedendritic grainlamellar grain
 Summary | Full Text:PDF