IEICE Trans

Tetsuo ENDOH

A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs Satoru TANOI Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 423-430 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: current mirror, low VDD, vertical MOSFET, output resistance, short channel effect,
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A Novel Alternating Voltage Controlled Current Sensing Method for Suppressing Thermal Dependency Kazuki ITOH Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 431-437 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: current sensing, current-mode control, DC-DC converter, voltage regulator module (VRM),
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A High Performance Current Latch Sense Amplifier with Vertical MOSFET Hyoungjun NA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 655-662 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: current latch sense amplifier, vertical MOSFET, SRAM, sensing time, speed, current, voltage gain, stability, yield, circuit area,
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FOREWORD Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 619-619 Type of Manuscript: FOREWORD Category: Keyword:
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Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM Yuto NORIFUSA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 847-853 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Vertical type 1T-DRAM, planar type 1T-DRAM, floating body DRAM, retention,
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A Schmitt Trigger Based SRAM with Vertical MOSFET Hyoungjun NA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 792-801 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Schmitt Trigger based SRAM (ST SRAM), 6T SRAM, vertical MOSFET, cell size, stability, static noise margin (SNM), speed performance, read time, read current,
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Source/Drain Engineering for High Performance Vertical MOSFET Takuya IMAMOTO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 807-813 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Vertical MOSFET, volume inversion, body channel, gate-all-around, source/drain profile, floating body,
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FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG) Moon-Sik SEO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 891-897 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: stacked-surrounding gate, 3-D vertical stacked cell, NAND flash memory, floating gate (FG), sidewall control gate (SCG), extended sidewall control gate (ESCG), separated sidewall control gate (SSCG),
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Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating Shuta TOGASHI Takashi OHSAWA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 854-859 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: MTJ, nonvolatile, fine-grained power gating, counter unit, low power,
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Current Controlled MOS Current Mode Logic with Auto-Detection of Threshold Voltage Fluctuation Hyoungjun NA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 617-626 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: MCML, current controlled MCML, threshold voltage fluctuation, differential-mode voltage gain, operation frequency,
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The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation Tetsuo ENDOH Masashi KAMIYANAGI Masakazu MURAGUCHI Takuya IMAMOTO Takeshi SASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 743-750 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Current Controlled-MCML, MCML, Vth fluctuation, stability, MTJ,
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Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 724-729 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 1/f noise, flicker noise, MOSFET, SiON/Poly-Si Gate, Random Telegraph Signal (RTS),
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Impact of Floating Body Type DRAM with the Vertical MOSFET Yuto NORIFUSA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 705-711 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: floating body type DRAM, 1T-DRAM, memory architecture, vertical MOSFET, 3D structured device, LSI,
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The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure Moon-Sik SEO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 686-692 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: stacked-surrounding gate, 3-D vertical stacked cell, NAND flash memory, floating gate (FG), extended sidewall control gate (ESCG),
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 730-736 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor,
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Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Masakazu MURAGUCHI Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 737-742 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: vertical MOSFET, quantum electron dynamics, impurity, time-dependent schrodinger equation, source edge,
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Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit Takeshi SASAKI Takuya IMAMOTO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 751-759 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high-k dielectric film, high-k/metal gate stack, mobility, CMOS, inverter,
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Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation Masashi KAMIYANAGI Takuya IMAMOTO Takeshi SASAKI Hyoungjun NA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 760-766 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: current controlled-MCML, MCML, Vth fluctuation, stability, NMOS, PMOS,
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Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo ENDOH Koji SAKUI Yukio YASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 557-562 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: vertical MOSFET, 3D structured device, MOSFET, LSI,
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Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 563-568 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: direct tunneling, two-dimensional electron gas, electron dynamics, quantum dot, electron transport,
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Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure Tetsuo ENDOH Koji SAKUI Yukio YASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 534-539 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Multi-Gate Technology Keyword: FinFET, halo I/I, MOSFET, threshold voltage roll-off, S-factor,
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Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu MURAGUCHI Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 552-556 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: vertical MOSFET, quantum electro-dynamics, resonant tunneling, surrounding gate, time-dependent Schrodinger equation,
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Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits Fumitaka IGA Masashi KAMIYANAGI Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 608-613 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: magnetic tunnel junction (MTJ), spin-transfer torque RAM (STT-RAM), tunnel magnetoresistance (TMR), magnetoresistive RAM (MRAM), current-induced magnetization switching,
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Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit Masashi KAMIYANAGI Fumitaka IGA Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 602-607 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: spin-transfer torque random access memory (STT-RAM), tunnel magnetoresistance (TMR), spin-injection, magnetic tunnel junction (MTJ), CMOS,
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Scalability of Vertical MOSFETs in Sub-10 nm Generation and Its Mechanism Tetsuo ENDOH Yuto NORIFUSA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 594-597 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Vertical MOSFET, sub-10 nm, driving current, cutoff leakage current, current density,
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Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor Tetsuo ENDOH Yuto NORIFUSA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 598-602 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: nano wire MOS transistor, self-heating effect, temperature, nano,
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Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML Type Latch Tetsuo ENDOH Masashi KAMIYANAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 603-607 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: dynamic feedback MCML, MCML, D-flip flop, sampling mode, holding mode,
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Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 955-961 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: SILC, stress-induced leakage current, SiO₂, ultra thin silicon dioxide, mean-free-path, O vacancy model,
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Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Using a Two-Dimensional Device Simulator Tetsuo ENDOH Yuto MOMMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 1000-1005 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: double-gate MOSFET, Halo implantation, subthreshold-slope (S-factor), V_th, body potential,
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An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells Masakazu HIOKI Hiroshi SAKURABA Tetsuo ENDOH Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/09/01 Vol. E87-C No. 9 pp. 1628-1635 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: Flash memory, Surrounding Gate Transistor (SGT), floating body, program and erase operation,
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A High Performance Voltage Down Converter (VDC) Using New Flexible Control Technology of Driving Current Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/12/25 Vol. E81-C No. 12 pp. 1905-1912 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: down voltage converter, driving current, power consumption, response,
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The Analysis of the Stacked-Surrounding Gate Transistor (S-SGT) DRAM for the High Speed and Low Voltage Operation Tetsuo ENDOH Katsuhisa SHINMEI Hiroshi SAKURABA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/09/25 Vol. E81-C No. 9 pp. 1491-1498 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: SGT, S-SGT, DRAM, bit-line capacitance,
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Evaluation of the Voltage Down Converter (VDC) with Low Ratio of Consuming Current to Load Current in DC/AC Operation Mode Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 pp. 968-974 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: voltage down converter, stability, response, low-power consumption,
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New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/10/25 Vol. E80-C No. 10 pp. 1310-1316 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: thin oxide films, stress leakage current, flash memory, step tonneling,
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New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/10/25 Vol. E80-C No. 10 pp. 1317-1323 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: flash memory, read disturb characteristics, write/erase operation, stress leakage current,
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An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT) Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 pp. 905-910 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Novel Structure Devices Keyword: SGT, FD-SGT, current-voltage characteristics, threshold voltage,
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An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT) Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 pp. 911-917 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Novel Structure Devices Keyword: SGT, FD-SGT, current-voltage characteristics, threshold voltage, short channel effect,
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A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/06/25 Vol. E79-C No. 6 pp. 832-835 Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology) Category: Nonvolatile memories Keyword: flash EEPROM, oxide leakage current, hole trap, reverse polarity pulse, read disturb,
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A Study of High-Performance NAND Structured EEPROMS Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/11/25 Vol. E75-C No. 11 pp. 1351-1357 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories) Category: Keyword: flash EEPROM, NAND EEPROM endurance, block technology, page program technology,
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