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A High Performance Current Latch Sense Amplifier with Vertical MOSFET Hyoungjun NA Tetsuo ENDOH | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C
No. 5
pp. 655-662
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: current latch sense amplifier, vertical MOSFET, SRAM, sensing time, speed, current, voltage gain, stability, yield, circuit area, | | Summary | Full Text:PDF(5.3MB) | |
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FOREWORD Tetsuo ENDOH | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C
No. 5
pp. 619-619
Type of Manuscript:
FOREWORD Category: Keyword:
| | Summary | Full Text:PDF(104.8KB) | |
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Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo ENDOH Koji SAKUI Yukio YASUDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C
No. 5
pp. 557-562
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: vertical MOSFET, 3D structured device, MOSFET, LSI, | | Summary | Full Text:PDF(7.8MB) | |
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