Tetsuo ENDOH


A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs
Satoru TANOI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 423-430
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current mirrorlow VDDvertical MOSFEToutput resistanceshort channel effect
 Summary | Full Text:PDF

A Novel Alternating Voltage Controlled Current Sensing Method for Suppressing Thermal Dependency
Kazuki ITOH Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 431-437
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current sensingcurrent-mode controlDC-DC convertervoltage regulator module (VRM)
 Summary | Full Text:PDF

A High Performance Current Latch Sense Amplifier with Vertical MOSFET
Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 655-662
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current latch sense amplifiervertical MOSFETSRAMsensing timespeedcurrentvoltage gainstabilityyieldcircuit area
 Summary | Full Text:PDF

FOREWORD
Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 619-619
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 847-853
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical type 1T-DRAMplanar type 1T-DRAMfloating body DRAMretention
 Summary | Full Text:PDF

A Schmitt Trigger Based SRAM with Vertical MOSFET
Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 792-801
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Schmitt Trigger based SRAM (ST SRAM)6T SRAMvertical MOSFETcell sizestabilitystatic noise margin (SNM)speed performanceread timeread current
 Summary | Full Text:PDF

Source/Drain Engineering for High Performance Vertical MOSFET
Takuya IMAMOTO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 807-813
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFETvolume inversionbody channelgate-all-aroundsource/drain profilefloating body
 Summary | Full Text:PDF

FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)
Moon-Sik SEO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 891-897
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
stacked-surrounding gate3-D vertical stacked cellNAND flash memoryfloating gate (FG)sidewall control gate (SCG)extended sidewall control gate (ESCG)separated sidewall control gate (SSCG)
 Summary | Full Text:PDF

Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating
Shuta TOGASHI Takashi OHSAWA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 854-859
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
MTJnonvolatilefine-grained power gatingcounter unitlow power
 Summary | Full Text:PDF

Current Controlled MOS Current Mode Logic with Auto-Detection of Threshold Voltage Fluctuation
Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 617-626
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
MCMLcurrent controlled MCMLthreshold voltage fluctuationdifferential-mode voltage gainoperation frequency
 Summary | Full Text:PDF

The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Tetsuo ENDOH Masashi KAMIYANAGI Masakazu MURAGUCHI Takuya IMAMOTO Takeshi SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 743-750
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Current Controlled-MCMLMCMLVth fluctuationstabilityMTJ
 Summary | Full Text:PDF

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 724-729
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1/f noiseflicker noiseMOSFETSiON/Poly-Si GateRandom Telegraph Signal (RTS)
 Summary | Full Text:PDF

Impact of Floating Body Type DRAM with the Vertical MOSFET
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 705-711
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
floating body type DRAM1T-DRAMmemory architecturevertical MOSFET3D structured deviceLSI
 Summary | Full Text:PDF

The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure
Moon-Sik SEO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 686-692
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
stacked-surrounding gate3-D vertical stacked cellNAND flash memoryfloating gate (FG)extended sidewall control gate (ESCG)
 Summary | Full Text:PDF

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamicscollective motion of electronSi-nano dottwo-dimensional electron gastunnelingSi-nano dot type floating gate MOS capacitor
 Summary | Full Text:PDF

Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 737-742
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical MOSFETquantum electron dynamicsimpuritytime-dependent schrodinger equationsource edge
 Summary | Full Text:PDF

Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
Takeshi SASAKI Takuya IMAMOTO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 751-759
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k dielectric filmhigh-k/metal gate stackmobilityCMOSinverter
 Summary | Full Text:PDF

Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
Masashi KAMIYANAGI Takuya IMAMOTO Takeshi SASAKI Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 760-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current controlled-MCMLMCMLVth fluctuationstabilityNMOSPMOS
 Summary | Full Text:PDF

Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 557-562
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET3D structured deviceMOSFETLSI
 Summary | Full Text:PDF

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu MURAGUCHI Yukihiro TAKADA Shintaro NOMURA Tetsuo ENDOH Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 563-568
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
direct tunnelingtwo-dimensional electron gaselectron dynamicsquantum dotelectron transport
 Summary | Full Text:PDF

Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 534-539
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
FinFEThalo I/IMOSFETthreshold voltage roll-offS-factor
 Summary | Full Text:PDF

Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 552-556
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFETquantum electro-dynamicsresonant tunnelingsurrounding gatetime-dependent Schrodinger equation
 Summary | Full Text:PDF

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Fumitaka IGA Masashi KAMIYANAGI Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
magnetic tunnel junction (MTJ)spin-transfer torque RAM (STT-RAM)tunnel magnetoresistance (TMR)magnetoresistive RAM (MRAM)current-induced magnetization switching
 Summary | Full Text:PDF

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
Masashi KAMIYANAGI Fumitaka IGA Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 602-607
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
spin-transfer torque random access memory (STT-RAM)tunnel magnetoresistance (TMR)spin-injectionmagnetic tunnel junction (MTJ)CMOS
 Summary | Full Text:PDF

Scalability of Vertical MOSFETs in Sub-10 nm Generation and Its Mechanism
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 594-597
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFETsub-10 nmdriving currentcutoff leakage currentcurrent density
 Summary | Full Text:PDF

Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo ENDOH Yuto NORIFUSA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 598-602
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
nano wire MOS transistorself-heating effecttemperaturenano
 Summary | Full Text:PDF

Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML Type Latch
Tetsuo ENDOH Masashi KAMIYANAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 603-607
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
dynamic feedback MCMLMCMLD-flip flopsampling modeholding mode
 Summary | Full Text:PDF

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 955-961
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
SILCstress-induced leakage currentSiO2ultra thin silicon dioxidemean-free-pathO vacancy model
 Summary | Full Text:PDF

Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Using a Two-Dimensional Device Simulator
Tetsuo ENDOH Yuto MOMMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 1000-1005
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
double-gate MOSFETHalo implantationsubthreshold-slope (S-factor)Vthbody potential
 Summary | Full Text:PDF

An Analysis of Program and Erase Mechanisms for Floating Channel Type Surrounding Gate Transistor Flash Memory Cells
Masakazu HIOKI Hiroshi SAKURABA Tetsuo ENDOH Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/09/01
Vol. E87-C  No. 9  pp. 1628-1635
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
Flash memorySurrounding Gate Transistor (SGT)floating bodyprogram and erase operation
 Summary | Full Text:PDF

A High Performance Voltage Down Converter (VDC) Using New Flexible Control Technology of Driving Current
Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1905-1912
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
down voltage converterdriving currentpower consumptionresponse
 Summary | Full Text:PDF

The Analysis of the Stacked-Surrounding Gate Transistor (S-SGT) DRAM for the High Speed and Low Voltage Operation
Tetsuo ENDOH Katsuhisa SHINMEI Hiroshi SAKURABA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/09/25
Vol. E81-C  No. 9  pp. 1491-1498
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SGTS-SGTDRAMbit-line capacitance
 Summary | Full Text:PDF

Evaluation of the Voltage Down Converter (VDC) with Low Ratio of Consuming Current to Load Current in DC/AC Operation Mode
Tetsuo ENDOH Kazutoshi NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 968-974
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
voltage down converterstabilityresponselow-power consumption
 Summary | Full Text:PDF

New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1310-1316
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
thin oxide filmsstress leakage currentflash memorystep tonneling
 Summary | Full Text:PDF

New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics
Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1317-1323
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memoryread disturb characteristicswrite/erase operationstress leakage current
 Summary | Full Text:PDF

An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 905-910
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltage
 Summary | Full Text:PDF

An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 911-917
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltageshort channel effect
 Summary | Full Text:PDF

A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs
Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 832-835
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
flash EEPROMoxide leakage currenthole trapreverse polarity pulseread disturb
 Summary | Full Text:PDF

A Study of High-Performance NAND Structured EEPROMS
Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/25
Vol. E75-C  No. 11  pp. 1351-1357
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
flash EEPROMNAND EEPROM enduranceblock technologypage program technology
 Summary | Full Text:PDF