Tanemasa ASANO


FOREWORD
Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10  pp. 1489-1489
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(90.9KB)

FOREWORD
Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 593-593
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(59.7KB)

Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer
Mitsuhiro HANABE Yahya Moubarak MEZIANI Taiichi OTSUJI Eiichi SANO Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 949-954
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
terahertzplasmon resonanceplasma instabilityheterostructurehigh-electron-mobility transistor (HEMT)
 Summary | Full Text:PDF(852.6KB)

Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition
Gou NAKAGAWA Noritoshi SHIBATA Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 662-666
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Thin Film Transistors
Keyword: 
poly-SiTFTmetal-induced lateral crystallizationneedle-like SiNi-silicideelectric field
 Summary | Full Text:PDF(961.6KB)

Differential Voltage (ΔV) Comparator with Variable Channel-Size MOSFET
Yasuhiro KOSASAYAMA Yutaka ARIMA Masashi UENO Masafumi KIMATA Kana HIMEI Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2004/02/01
Vol. E87-A  No. 2  pp. 357-363
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
VS-MOSVT-INVvariablechannel-sizecomparator
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Ion Beam Modified Photoresist A New Class of Field Emitter Material for Large Area Devices
Tanemasa ASANO Daisuke SASAGURI Katsuya HIGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/11/25
Vol. E81-C  No. 11  pp. 1715-1720
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: 
Keyword: 
field emitter arrayFEDelectron sourceion beam modificationphotoresist
 Summary | Full Text:PDF(857.6KB)