Takuya SARAYA

Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
Toshiro HIRAMOTO Anil KUMAR Takuya SARAYA Shinji MIYANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6  pp. 759-765
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
transistor, MOSFET, variability, off-state stress, 
 Summary | Full Text:PDF(3.5MB)
NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
Nurul Ezaila ALIAS Anil KUMAR Takuya SARAYA Shinji MIYANO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 620-623
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Negative Bias Temperature Instability (NBTI), variability, SRAM, transistor, MOSFET, 
 Summary | Full Text:PDF(1.1MB)
Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1073-1078
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
SOI MOSFET, triangular wire, short channel effect, subthreshold factor, DIBL, 
 Summary | Full Text:PDF(1MB)