Takumi NITTONO


Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF(781KB)

Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology
Takumi NITTONO Koichi NAGATA Yoshiki YAMAUCHI Takashi MAKIMURA Hiroshi ITO Osaake NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1455-1463
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
heterojunction bipolar transistorself-aligned structureoxygen-ion implantationzinc diffusioncarbon doping
 Summary | Full Text:PDF(909.6KB)