Takeshi SASAKI

Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO Takeshi SASAKI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 724-729
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1/f noise, flicker noise, MOSFET, SiON/Poly-Si Gate, Random Telegraph Signal (RTS), 
 Summary | Full Text:PDF(2.3MB)
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Tetsuo ENDOH Masashi KAMIYANAGI Masakazu MURAGUCHI Takuya IMAMOTO Takeshi SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 743-750
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Current Controlled-MCML, MCML, Vth fluctuation, stability, MTJ, 
 Summary | Full Text:PDF(2.1MB)
Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
Takeshi SASAKI Takuya IMAMOTO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 751-759
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k dielectric film, high-k/metal gate stack, mobility, CMOS, inverter, 
 Summary | Full Text:PDF(3.2MB)
Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
Masashi KAMIYANAGI Takuya IMAMOTO Takeshi SASAKI Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 760-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current controlled-MCML, MCML, Vth fluctuation, stability, NMOS, PMOS, 
 Summary | Full Text:PDF(1.1MB)