Takeshi MIZOGUCHI


Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
Takeshi MIZOGUCHI Toshiyuki NAKA Yuta TANIMOTO Yasuhiro OKADA Wataru SAITO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2017/03/01
Vol. E100-C  No. 3  pp. 321-328
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
powerGaN-HEMTsHiSIMfield platecapacitance
 Summary | Full Text:PDF

A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential
Dondee NAVARRO Takeshi MIZOGUCHI Masami SUETAKE Kazuya HISAMITSU Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 1079-1086
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
pinch-off regionchannel-length modulationoverlap capacitancesurface-potential-based modelingcircuit simulation
 Summary | Full Text:PDF