Takeshi MIURA


3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology
Kazuya YAMAMOTO Miyo MIYASHITA Nobuyuki OGAWA Takeshi MIURA Teruyuki SHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/07/01
Vol. E90-C  No. 7  pp. 1515-1523
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
wireless LANattenuatordiodesheterojunction bipolar transistors (HBTs)linearityintermodulation distortionlinearizationmonolithic microwave integrated circuit (MMIC)
 Summary | Full Text:PDF

A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module
Teruyuki SHIMURA Tomoyuki ASADA Satoshi SUZUKI Takeshi MIURA Jun OTSUJI Ryo HATTORI Yukio MIYAZAKI Kazuya YAMAMOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7  pp. 1495-1501
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GSM/EDGE dual modepower amplifier moduleInGaP HBTdiode switchRx-noise
 Summary | Full Text:PDF

High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Teruyuki SHIMURA Takeshi MIURA Yutaka UNEME Hirofumi NAKANO Ryo HATTORI Mutsuyuki OTSUBO Kazutomi MORI Akira INOUE Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 740-745
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction bipolar transistordigital cellular phoneindividual thermal shuntemitter air-bridgebias mode
 Summary | Full Text:PDF