Takeshi IGARASHI


Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1015-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
ITOSchottky gatetunnelAlGaN/GaN HEMTgate leakage current
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