Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C
No. 7
pp. 1015-1019
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword:
ITO, Schottky gate, tunnel, AlGaN/GaN HEMT, gate leakage current, |
