Takeo IKEZAWA


Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 409-415
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
atomisticfluctuationprocess simulationdevice simulation
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Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage
Masami HANE Takeo IKEZAWA Akio FURUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1247-1252
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
interstitial-siliconinterstitial diffusivitydiffusion-constantmolecular dynamicsion-implantation damage
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