Takatomo ENOKI


W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs
Koji INAFUNE Eiichi SANO Hideaki MATSUZAKI Toshihiko KOSUGI Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 954-958
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
millimeter waveFDTD methodAIAInP-based HEMT
 Summary | Full Text:PDF(1.4MB)

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 949-953
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMTInPInGaAsInAlAslattice-matchedcurrent gain cutoff frequency
 Summary | Full Text:PDF(1.1MB)

FOREWORD
Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 873-873
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(51.6KB)

Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2000-2003
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
 Summary | Full Text:PDF(389.4KB)

Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
Miwa MUTOH Hiroyuki FUKUYAMA Toshihiro ITOH Takatomo ENOKI Tsugumichi SHIBATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1219-1221
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
RTD quantizerdelta-sigma modulatorthree cascoded RTD quantizersquantization noisenumber of harmonics
 Summary | Full Text:PDF(190.4KB)

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7  pp. 1080-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
InPHEMTICinterconnectiondelaystatic frequency divider
 Summary | Full Text:PDF(1.3MB)

Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit
Koichi MURATA Taiichi OTSUJI Takatomo ENOKI Yohtaro UMEDA Mikio YONEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 456-464
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
exclusive OR/NORclock recovery circuitInP HEMT
 Summary | Full Text:PDF(561.4KB)

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
 Summary | Full Text:PDF(1.3MB)

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF(915.1KB)

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6  pp. 649-655
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
 Summary | Full Text:PDF(707.7KB)

A 20 GHz Band Monolithic Low Noise Amplifier Using GaAs ADVANCED SAINT-FET
Masahiro MURAGUCHI Takatomo ENOKI Kimiyoshi YAMASAKI Kuniki OHWADA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 326-328
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Microwave Circuits
Keyword: 
 Summary | Full Text:PDF(374.1KB)