IEICE Trans

Takatomo ENOKI

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs Koji INAFUNE Eiichi SANO Hideaki MATSUZAKI Toshihiko KOSUGI Takatomo ENOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 954-958 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: millimeter wave, FDTD method, AIA, InP-based HEMT,
	Summary \| Full Text:PDF

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 949-953 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency,
	Summary \| Full Text:PDF

FOREWORD Takatomo ENOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 873-873 Type of Manuscript: FOREWORD Category: Keyword:
	Summary \| Full Text:PDF

Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 2000-2003 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: double-recess, InP-passivation layer, HEMT, breakdown voltage,
	Summary \| Full Text:PDF

Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer Miwa MUTOH Hiroyuki FUKUYAMA Toshihiro ITOH Takatomo ENOKI Tsugumichi SHIBATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/05/01 Vol. E85-C No. 5 pp. 1219-1221 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: RTD quantizer, delta-sigma modulator, three cascoded RTD quantizers, quantization noise, number of harmonics,
	Summary \| Full Text:PDF

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 pp. 1080-1085 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: InP, HEMT, IC, interconnection, delay, static frequency divider,
	Summary \| Full Text:PDF

Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit Koichi MURATA Taiichi OTSUJI Takatomo ENOKI Yohtaro UMEDA Mikio YONEYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 pp. 456-464 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: exclusive OR/NOR, clock recovery circuit, InP HEMT,
	Summary \| Full Text:PDF

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 pp. 409-418 Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Keyword: InP, HEMT, IC, optical communication, delay,
	Summary \| Full Text:PDF

Novel Channel Structures for High Frequency InP-Based HTEFs Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/25 Vol. E76-C No. 9 pp. 1402-1411 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: InGaAs, InAs, InAlAs, InP, current gain cutoff frequency, delay times, heterojunction FET, quantum well, real-space transfer,
	Summary \| Full Text:PDF

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n⁺-InGaAs/n⁺-InAlAs Cap Layer Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/06/25 Vol. E75-C No. 6 pp. 649-655 Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology) Category: Keyword: InGaAs, HEMT, low noise, equivalent circuit, InP,
	Summary \| Full Text:PDF

A 20 GHz Band Monolithic Low Noise Amplifier Using GaAs ADVANCED SAINT-FET Masahiro MURAGUCHI Takatomo ENOKI Kimiyoshi YAMASAKI Kuniki OHWADA
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1986/04/25 Vol. E69-E No. 4 pp. 326-328 Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan) Category: Microwave Circuits Keyword:
	Summary \| Full Text:PDF