Takasuke HASHIMOTO


7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5  pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
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