IEICE SEARCH SYSTEM

Takashi OHZONE

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/12/01 Vol. E92-C No. 12 pp. 1523-1530 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOS capacitors, Si-implantation, thermal oxide, I-V hysteresis, hysteresis window, nonvolatile memory,
	Summary \| Full Text:PDF(1.7MB)

A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs Toshihiro MATSUDA Yuya SUGIYAMA Keita NOHARA Kazuhiro MORITA Hideyuki IWATA Takashi OHZONE Takayuki MORISHITA Kiyotaka KOMOKU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/08/01 Vol. E91-C No. 8 pp. 1331-1337 Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures (ICMTS2007)) Category: Keyword: CMOS, symmetry, orientation dependence, drain current, substrate current,
	Summary \| Full Text:PDF(1.1MB)

A CMOS Temperature Sensor Circuit Takashi OHZONE Tatsuaki SADAMOTO Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 895-902 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: CMOS, temperature sensor, temperature dependent voltage, subthreshold current,
	Summary \| Full Text:PDF(869.8KB)

A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width Takashi OHZONE Eiji ISHII Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/02/01 Vol. E90-C No. 2 pp. 515-522 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: CMOSFET, reliability, LDD-type, channel width, isolation,
	Summary \| Full Text:PDF(1.3MB)

A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET Takashi OHZONE Kazuhiko OKADA Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/09/01 Vol. E89-C No. 9 pp. 1351-1357 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: CMOSFET, LDD-type, source/drain-resistance, sheet resistance,
	Summary \| Full Text:PDF(997KB)

A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit Toshihiro MATSUDA Ryuichi MINAMI Akira KANAMORI Hideyuki IWATA Takashi OHZONE Shinya YAMAMOTO Takashi IHARA Shigeki NAKAJIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 pp. 1087-1093 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: CMOS, voltage reference, threshold-voltage, low power,
	Summary \| Full Text:PDF(953.5KB)

A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 pp. 811-816 Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures) Category: Keyword: MOSFET, photoemission, hot carrier, gate length,
	Summary \| Full Text:PDF(1.1MB)

Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO₂ Toshihiro MATSUDA Masaharu KAWABE Hideyuki IWATA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/11/01 Vol. E85-C No. 11 pp. 1895-1904 Type of Manuscript: Special Section PAPER (Special Issue on Electronic Displays) Category: EL Displays Keyword: MOS capacitor, electroluminescence, Si-implantation, SiO₂,
	Summary \| Full Text:PDF(1.3MB)

A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/05/01 Vol. E85-C No. 5 pp. 1125-1133 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Keyword: test structure, MOSFET, hot carrier, photoemission,
	Summary \| Full Text:PDF(1.8MB)

A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/04/25 Vol. E82-C No. 4 pp. 593-601 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Keyword: MOSFET, hot carriers, photoemission, junction breakdown,
	Summary \| Full Text:PDF(527.4KB)

Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach Tsukasa OOOKA Hideyuki IWATA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/25 Vol. E80-C No. 3 pp. 417-422 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI MOSFETs, numerical simulation, temperature dependence, single event upset, soft errors,
	Summary \| Full Text:PDF(423.1KB)

Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45 Takashi OHZONE Naoko MATSUYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/25 Vol. E79-C No. 2 pp. 172-178 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Device and Circuit Characterization Keyword: MOSFET, electrical characteristics, 45 CMOSFET,
	Summary \| Full Text:PDF(560.5KB)

C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO₂ Takashi OHZONE Takashi HORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/06/25 Vol. E77-C No. 6 pp. 952-959 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: MOSFET, Si-implantation, EEPROM,
	Summary \| Full Text:PDF(684.1KB)

A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS- and Trench-Isolated MOSFETs Takashi OHZONE Hideyuki IWATA Yukiharu URAOKA Shinji ODANAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/11/25 Vol. E76-C No. 11 pp. 1673-1682 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: CMOS, hot-carrier, photoemission, isolation,
	Summary \| Full Text:PDF(1.1MB)

Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup Hideyuki IWATA Mitsuo YASUHIRA Shinji ODANAKA Takashi OHZONE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/25 Vol. E75-C No. 10 pp. 1281-1290 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: heavy-ion, CMOS, latchup, simulation,
	Summary \| Full Text:PDF(677KB)

MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load Takashi OHZONE Takashi HIRAO Shiro HORIUCHI Hideo HOZUMI
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1980/11/25 Vol. E63-E No. 11 pp. 803-806 Type of Manuscript: PAPER Category: Integrated Circuits Keyword:
	Summary \| Full Text:PDF(232.1KB)

The Features of Resistor Load MOSIC Using the Ion-Implanted Polysilicon Resistors Takashi OHZONE Takashi HIRAO Shiro HORIUCHI Hideo HOZUMI
Publication: IEICE TRANSACTIONS (1976-1990) Publication Date: 1980/04/25 Vol. E63-E No. 4 pp. 267-274 Type of Manuscript: PAPER Category: Integrated Circuits Keyword:
	Summary \| Full Text:PDF(551.5KB)