Takashi MIMURA


E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Issei WATANABE Akira ENDOH Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1251-1257
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InGaAs/InAlAs HEMTE-band LNA-MMICmaximum oscillation frequencycurrent-gain cutoff frequencyminimum noise figure
 Summary | Full Text:PDF(845.1KB)

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
Masataka HIGASHIWAKI Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 984-988
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
GaNheterostructure field-effect transistors (HFETs)millimeter-wave
 Summary | Full Text:PDF(452.2KB)

HEMT: Looking Back at Its Successful Commercialization
Takashi MIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1908-1910
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
high electron mobility transistorHEMTGaAs MESFETradio telescopebroadcasting satellite
 Summary | Full Text:PDF(184.2KB)

High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAsInPHEMTcutoff frequencylow-temperature fabrication process
 Summary | Full Text:PDF(948KB)

A Cryogenic HEMT Pseudorandom Number Generator
Yoshimi ASADA Yasuhiro NAKASHA Norio HIDAKA Takashi MIMURA Masayuki ABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1133-1139
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMT (high electron mobility transistor)pseudorandom number generatormaximum-length-sequenceDCFL (direct-coupled FET logic)ECL (emitter coupled logic) compatibility
 Summary | Full Text:PDF(852.4KB)