| Takashi IPPOSHI
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Look-Ahead Dynamic Threshold Voltage Control Scheme for Improving Write Margin of SOI-7T-SRAM Masaaki IIJIMA Kayoko SETO Masahiro NUMA Akira TADA Takashi IPPOSHI | Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2007/12/01
Vol. E90-A
No. 12
pp. 2691-2694
Type of Manuscript:
Special Section LETTER (Special Section on VLSI Design and CAD Algorithms) Category: Memory Design and Test Keyword: PD-SOI, body-bias, SRAM, low power design, | | Summary | Full Text:PDF(354.2KB) | |
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