Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4pp. 672-677 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: HBT, gallium arsenide, ruggedness, breakdown voltage, linearity, composite collector, WCDMA,