Takahiro TSURUDA


SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
Shigehiro KUGE Fukashi MORISHITA Takahiro TSURUDA Shigeki TOMISHIMA Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/07/25
Vol. E79-C  No. 7  pp. 997-1002
Type of Manuscript:  Special Section PAPER (Special Issue on the 1995 Symposium on VLSI Circuits (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996))
Category: Memory
Keyword: 
 Summary | Full Text:PDF(488.1KB)

Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's
Yasuo YAMAGUCHI Toshiyuki OASHI Takahisa EIMORI Toshiaki IWAMATSU Shouichi MITAMOTO Katsuhiro SUMA Takahiro TSURUDA Fukashi MORISHITA Masakazu HIROSE Hideto HIDAKA Kazutami ARIMOTO Kazuyasu FUJISHIMA Yasuo INOUE Tadashi NISHIMURA Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 772-780
Type of Manuscript:  INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
SOLSIMOXDRAMlow-voltage operation
 Summary | Full Text:PDF(1MB)