Takaaki KAWAHARA

Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFET, high-κ gate dielectric, HfO2, atomic layer deposition, long purge, impurity, gate leakage current, 
 Summary | Full Text:PDF(1.1MB)
Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition
Tsuyoshi HORIKAWA Junji TANIMURA Takaaki KAWAHARA Mikio YAMAMUKA Masayoshi TARUTANI Kouichi ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 497-504
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
chemical vapor deposition, (Ba,Sr)TiO3, annealing, dielectric constant, dielectric breakdown, 
 Summary | Full Text:PDF(1.2MB)