Taiichi OTSUJI

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
Amine EL MOUTAOUAKIL Tsuneyoshi KOMORI Kouhei HORIIKE Tetsuya SUEMITSU Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1286-1289
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: THz Electronics
Keyword: 
terahertz, plasmon resonance, emitter, dual grating gate dimension, 
 Summary | Full Text:PDF
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
Takuya NISHIMURA Nobuhiro MAGOME HyunChul KANG Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 696-701
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
terahertz, plasmon resonance, emitter, dispersion control, grating dimension, 
 Summary | Full Text:PDF
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer
Mitsuhiro HANABE Yahya Moubarak MEZIANI Taiichi OTSUJI Eiichi SANO Tanemasa ASANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 949-954
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
terahertz, plasmon resonance, plasma instability, heterostructure, high-electron-mobility transistor (HEMT), 
 Summary | Full Text:PDF
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer
Takuya NISHIMURA Mitsuhiro HANABE Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1005-1011
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
plasmon resonance, photomixer, terahertz, multiplier, grating, 
 Summary | Full Text:PDF
Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer
Mitsuhiro HANABE Takuya NISHIMURA Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 985-992
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
plasmon resonance, photomixer, terahertz, grating, HEMT, 
 Summary | Full Text:PDF
Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors
Taiichi OTSUJI Yoshihiro KANAMARU Hajime KITAMURA Mitsuru MATSUOKA Osamu OGAWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1985-1993
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
plasma wave, resonance, FET, HEMT, Terahertz, polariton, harmonic resonance, 
 Summary | Full Text:PDF
Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems
Taiichi OTSUJI Shin NAKAE Hajime KITAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1470-1476
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
plasma wave, resonance, FET, terahertz, virtual carrier, 
 Summary | Full Text:PDF
70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
Koichi MURATA Taiichi OTSUJI Eiichi SANO Shunji KIMURA Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/07/25
Vol. E83-C  No. 7  pp. 1166-1169
Type of Manuscript:  LETTER
Category: Integrated Electronics
Keyword: 
multiplexer, decision, module, InAlAs/InGaAs/InP HEMT, optical communication, 
 Summary | Full Text:PDF
Ultrafast Gating Circuit Using Coupled Waveguides
Koichi NARAHARA Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/01/25
Vol. E83-C  No. 1  pp. 98-108
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
ultrafast electronics, coupled lines, propagation modes, electro-optic sampling, 
 Summary | Full Text:PDF
Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
Kimikazu SANO Koichi MURATA Taiichi OTSUJI Tomoyuki AKEYOSHI Naofumi SHIMIZU Masafumi YAMAMOTO Tadao ISHIBASHI Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Vol. E82-C  No. 9  pp. 1638-1646
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Application of Resonant Tunneling Devices
Keyword: 
optoelectronic IC (OEIC), decision circuit, resonant tunneling diode, uni-traveling-carrier photodiode, SPICE, lightwave communications, 
 Summary | Full Text:PDF
A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop
Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 559-561
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision IC, GaAs MESFET, static D-FF, SCFL circuitry, 
 Summary | Full Text:PDF
Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit
Koichi MURATA Taiichi OTSUJI Takatomo ENOKI Yohtaro UMEDA Mikio YONEYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 456-464
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
exclusive OR/NOR, clock recovery circuit, InP HEMT, 
 Summary | Full Text:PDF
Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InP, HEMT, IC, optical communication, delay, 
 Summary | Full Text:PDF
An Analytical Toggle Frequency Expression for Source-Coupled FET Logic (SCFL) Frequency Dividers
Koichi MURATA Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/07/25
Vol. E81-C  No. 7  pp. 1106-1111
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
analytical expression, toggle frequency, SCFL, frequency divider, GaAs MESFET, 
 Summary | Full Text:PDF
A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1624-1627
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision IC, MESFET, super-dynamic D-FF, wideband amplifier, 
 Summary | Full Text:PDF