Tadahiro SASAKI


Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
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