Sylvie GALDIN


Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs
Eric CASSAN Sylvie GALDIN Philippe DOLLFUS Patrice HESTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1194-1202
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
MOSFETsdownsizinggate oxidedirect-tunnelinghot carriersmodeling
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