Sung-Min YOON


Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 771-776
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric-gate FETretention1T2Cmemory windowthreshold voltage
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