Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-CNo. 8pp. 1212-1217 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: GaN, HEMT, threshold voltage, piezoelectric effects, film stress,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10pp. 2000-2003 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: double-recess, InP-passivation layer, HEMT, breakdown voltage,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/25 Vol. E82-CNo. 11pp. 1951-1959 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: three-dimensional, MMIC, masterslice, LMDS, quick development, down-converter,
