Siegfried SELBERHERR


Investigation of the Electron Mobility in Strained Si1-xGex at High Ge Composition
Sergey SMIRNOV Hans KOSINA Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 350-356
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
Monte Carlo simulationstrained SiGelow field electron mobilitydoping and strain effects
 Summary | Full Text:PDF(514.1KB)

An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
Hajdin CERIC Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 421-426
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
electromigrationdiffuse interface modelgrid adaptationvoid evolutionfinite element method
 Summary | Full Text:PDF(697.1KB)

A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers
Mihail NEDJALKOV Hans KOSINA Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1218-1223
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
Monte Carlo methodstochastic algorithmssmall signal analysiskinetic coefficients
 Summary | Full Text:PDF(468.5KB)

Practical Inverse Modeling with SIESTA
Rudolf STRASSER Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1303-1310
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Simulation Methodology and Environment
Keyword: 
calibrationinverse modelingparameter identificationtool integrationparallel and distributed computation
 Summary | Full Text:PDF(2.1MB)

A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Alexander BURENKOV Klaus TIETZEL Andreas HOSSINGER Jurgen LORENZ Heiner RYSSEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1259-1266
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
ion implantationthree-dimensionalMonte-Carloanalyticalsimulation
 Summary | Full Text:PDF(1.9MB)

Mesh Generation for Application in Technology CAD
Peter FLEISCHMANN Wolfgang PYKA Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 937-947
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
conforming Delaunay triangulationconstrained Delaunay triangulationSteiner pointadvancing frontquality mesh generationboundary conforming meshSchonhardt polyhedron
 Summary | Full Text:PDF(4.1MB)

Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree
Hannes STIPPEL Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 118-123
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
ion implantationMonte Carlo methodpoint locationoctree
 Summary | Full Text:PDF(472.4KB)

Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT)
Hermann BRAND Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 179-186
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
simulationlatch-upIGTthermodynamicentropy
 Summary | Full Text:PDF(624.1KB)

Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations
Ernst STRASSER Gerhard SCHROM Karl WIMMER Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 92-97
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
simulationetchingdepositionminkowski operations
 Summary | Full Text:PDF(568.4KB)