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Shunsuke OKUMURA

A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation Yohei NAKATA Yuta KIMI Shunsuke OKUMURA Jinwook JUNG Takuya SAWADA Taku TOSHIKAWA Makoto NAGATA Hirofumi NAKANO Makoto YABUUCHI Hidehiro FUJIWARA Koji NII Hiroyuki KAWAI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/04/01 Vol. E97-C No. 4 pp. 332-341 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology) Category: Keyword: design for robustness, cache, variation tolerance, 7T/14T SRAM,
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Multiple-Cell-Upset Tolerant 6T SRAM Using NMOS-Centered Cell Layout Shusuke YOSHIMOTO Shunsuke OKUMURA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2013/07/01 Vol. E96-A No. 7 pp. 1579-1585 Type of Manuscript: PAPER Category: Reliability, Maintainability and Safety Analysis Keyword: SRAM, soft error rate (SER), multiple cell upset (MCU), neutron particle, twin well, triple well,
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Reconfiguring Cache Associativity: Adaptive Cache Design for Wide-Range Reliable Low-Voltage Operation Using 7T/14T SRAM Jinwook JUNG Yohei NAKATA Shunsuke OKUMURA Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/04/01 Vol. E96-C No. 4 pp. 528-537 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology) Category: Keyword: low-voltage adaptive cache design, reconfiguring associativity, dynamic voltage frequency scaling, 7T/14T SRAM,
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A 128-bit Chip Identification Generating Scheme Exploiting Load Transistors' Variation in SRAM Bitcells Shunsuke OKUMURA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2012/12/01 Vol. E95-A No. 12 pp. 2226-2233 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Circuit Design Keyword: SRAM, chip ID, physical unclonable function (PUF),
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Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/10/01 Vol. E95-C No. 10 pp. 1675-1681 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: SRAM, soft error, multiple-bit upset (MBU), single-event upset (SEU), error correction coding (ECC), alpha particle, neutron particle,
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Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Koji NII Masahiko YOSHIMOTO Hiroshi KAWAGUCHI
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2012/08/01 Vol. E95-A No. 8 pp. 1359-1365 Type of Manuscript: PAPER Category: Reliability, Maintainability and Safety Analysis Keyword: SRAM, single-event upset (SEU), bit error rate (BER), soft error rate (SER), neutron particle, alpha particle,
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A 0.15-µm FD-SOI Substrate Bias Control SRAM with Inter-Die Variability Compensation Scheme Shunsuke OKUMURA Hidehiro FUJIWARA Kosuke YAMAGUCHI Shusuke YOSHIMOTO Masahiko YOSHIMOTO Hiroshi KAWAGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 579-585 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: SRAM, FD-SOI, Inter-die variation,
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A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme Shusuke YOSHIMOTO Masaharu TERADA Shunsuke OKUMURA Toshikazu SUZUKI Shinji MIYANO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 572-578 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: SRAM, 8T, low energy, disturb, half select, write back,
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7T SRAM Enabling Low-Energy Instantaneous Block Copy and Its Application to Transactional Memory Shunsuke OKUMURA Yuki KAGIYAMA Yohei NAKATA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2011/12/01 Vol. E94-A No. 12 pp. 2693-2700 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Circuit Design Keyword: SRAM DMA, transactional memory, checkpoint and recovery, multi-core processor,
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A Dependable SRAM with 7T/14T Memory Cells Hidehiro FUJIWARA Shunsuke OKUMURA Yusuke IGUCHI Hiroki NOGUCHI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/04/01 Vol. E92-C No. 4 pp. 423-432 Type of Manuscript: Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era) Category: Keyword: SRAM, dependability, quality of a bit,
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A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing Hiroki NOGUCHI Yusuke IGUCHI Hidehiro FUJIWARA Shunsuke OKUMURA Yasuhiro MORITA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 pp. 543-552 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories) Category: Keyword: 8T SRAM cell, 10T SRAM cell, low-power SRAM, non-precharge SRAM, two-port SRAM, video processing,
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