IEICE Trans

Shun-ichiro OHMI

The Influence of High-Temperature Sputtering on the N-Doped LaB₆ Thin Film Formation Utilizing RF Sputtering Kyung Eun PARK Shun-ichiro OHMI
Publication: Publication Date: 2020/06/01 Vol. E103-C No. 6 pp. 293-298 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Electronic Materials Keyword: N-doped LaB₆, MOS diode, Schottky diode, effective work function, RF sputtering,
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In-Situ N₂-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering Shun-ichiro OHMI Shin ISHIMATSU Yuske HORIUCHI Sohya KUDOH
Publication: Publication Date: 2020/06/01 Vol. E103-C No. 6 pp. 299-303 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Semiconductor Materials and Devices Keyword: high-k, gate insulator, interfacial layer, nitridation, N₂-plasma, ECR, HfN,
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Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO₂ Utilizing Pt Gate Electrodes Min Gee KIM Masakazu KATAOKA Rengie Mark D. MAILIG Shun-ichiro OHMI
Publication: Publication Date: 2020/06/01 Vol. E103-C No. 6 pp. 280-285 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Electronic Materials Keyword: ferroelectrics, nondoped HfO₂, MFSFET, nonvolatile memory,
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The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process Rengie Mark D. MAILIG Min Gee KIM Shun-ichiro OHMI
Publication: Publication Date: 2020/06/01 Vol. E103-C No. 6 pp. 286-292 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Electronic Materials Keyword: PdEr-silicide, TiN encapsulating layer, dopant segregation process, Schottky barrier height,
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The Effect of Kr/O₂ Sputtering on the Ferroelectric Properties of SrBi₂Ta₂O₉ Thin Film Formation Binjian ZENG Jiajia LIAO Qiangxiang PENG Min LIAO Yichun ZHOU Shun-ichiro OHMI
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 441-446 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SBT thin film, Kr/O₂ sputtering, electrical properties, XRD,
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Low Temperature Formation of Pd₂Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process Rengie Mark D. MAILIG Shun-ichiro OHMI
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 447-452 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: palladium silicide, TiN encapsulating layer, dopant segregation process, S/D engineering, Schottky barrier height,
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Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process Shun-ichiro OHMI Yuya TSUKAMOTO Rengie Mark D. MAILIG
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 453-457 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: PtHf-alloy silicide, PtHf-alloy target, selective etching, contact resistivity, dopant segregation, RF magnetron sputtering,
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The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100) Min Gee KIM Shun-ichiro OHMI
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 435-440 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ferroelectric HfO₂, undoped HfO₂, post-metallization annealing, MFS diodes,
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AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs Shun-ichiro OHMI Mizuha HIROKI Yasutaka MAEDA
Publication: Publication Date: 2019/02/01 Vol. E102-C No. 2 pp. 138-142 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics and Biotechnology) Category: Keyword: AuGe, bottom-contact, pentacene, OFET, lift-off, yield, SPM cleaning, PMA process,
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Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB₆ Bottom-Contact Electrodes Yasutaka MAEDA Mizuha HIROKI Shun-ichiro OHMI
Publication: Publication Date: 2018/05/01 Vol. E101-C No. 5 pp. 323-327 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: pentacene, N-doped LaB₆, OFET, bottom-contact electrodes, surface treatment, electron injection,
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Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H₂ Ambient Sohya KUDOH Shun-ichiro OHMI
Publication: Publication Date: 2018/05/01 Vol. E101-C No. 5 pp. 328-333 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Hf-based MONOS structure, ECR plasma sputtering, endurance, atomically flat Si surface, Ar/H₂ ambient,
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PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process Shun-ichiro OHMI Yuya TSUKAMOTO Weiguang ZUO Yasushi MASAHIRO
Publication: Publication Date: 2018/05/01 Vol. E101-C No. 5 pp. 311-316 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: PdEr-alloy target, silicide, schottky barrier height, contact resistivity, RF magnetron sputtering,
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PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures Shun-ichiro OHMI Mengyi CHEN Weiguang ZUO Yasushi MASAHIRO
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 458-462 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: PdYb-silicide, contact resistivity, Schottky barrier height, stacked layer, RF magnetron sputtering,
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Effect of Nitrogen-Doped LaB₆ Interfacial Layer on Device Characteristics of Pentacene-Based OFET Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 463-467 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: pentacene, N-doped LaB₆, OFET, subthreshold swing, aging characteristic, grain size,
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A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics Sohya KUDOH Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 504-509 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si surface roughness, oxidation process, substrate orientation, MIS diode,
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PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity Shun-ichiro OHMI Mengyi CHEN Xiaopeng WU Yasushi MASAHIRO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 510-515 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: PtHf-alloy target, PtHf-alloy silicide, contact resistivity, Schottky barrier height, RF magnetron sputtering,
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High Quality Pentacene Film Formation on N-Doped LaB₆ Donor Layer Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 535-540 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: LaB₆, OFET, bottom-contact, pentacene, dendritic grain, lamellar grain,
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A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics Sohya KUDOH Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-C No. 5 pp. 402-405 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si surface roughness, sacrificial oxidation, TDDB,
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Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 413-418 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si surface roughness, HfON gate insulator, ECR plasma sputtering, plasma oxidation, 1/f noise, TDDB,
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Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H₂ Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation Dae-Hee HAN Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 669-673 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: surface roughness, HfON gate insulator, ECR plasma sputtering, plasma oxidation, EOT,
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 885-890 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: pentacene, OFETs, high-k, grain size, HfON,
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Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer Young-Uk SONG Hiroshi ISHIWARA Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 767-770 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: pentacene, C-V, hysteresis, pentacene based MOS diodes,
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Modulation of PtSi Work Function by Alloying with Low Work Function Metal Jun GAO Jumpei ISHIKAWA Shun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 775-779 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: PtSi, monosilicide, alloy, work function, SWC-anneal,
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A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels Shun-ichiro OHMI Tetsushi SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 994-999 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: twin-channel, self-align, SOI, Ω-gate, SiN, wet etching,
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Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N₂ Plasma Nitridation of HfO₂ Thin Films Shun-ichiro OHMI Tomoki KUROSE Masaki SATOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-C No. 5 pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: electron cyclotron resonance, sputtering, plasma nitridation, postdeposition annealing, high-k, HfO_xN_y,
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Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications Takashi YAMAZAKI Shun-ichiro OHMI Shinya MORITA Hiroyuki OHRI Junichi MUROTA Masao SAKURABA Hiroo OMI Tetsushi SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 656-661 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: silicon on insulator (SOI) wafer, patterned SOI, SiGe, selective etching, MOSFET,
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Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100) Shun-ichiro OHMI Go YAMANAKA Tetsushi SAKAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 24-29 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ, AlON, ECR, sputtering, oxidation,
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