Shun-ichiro OHMI


Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process
Rengie Mark D. MAILIG Shun-ichiro OHMI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 447-452
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
palladium silicideTiN encapsulating layerdopant segregation processS/D engineeringSchottky barrier height
 Summary | Full Text:PDF

Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process
Shun-ichiro OHMI Yuya TSUKAMOTO Rengie Mark D. MAILIG 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 453-457
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PtHf-alloy silicidePtHf-alloy targetselective etchingcontact resistivitydopant segregationRF magnetron sputtering
 Summary | Full Text:PDF

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)
Min Gee KIM Shun-ichiro OHMI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 435-440
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ferroelectric HfO2undoped HfO2post-metallization annealingMFS diodes
 Summary | Full Text:PDF

The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation
Binjian ZENG Jiajia LIAO Qiangxiang PENG Min LIAO Yichun ZHOU Shun-ichiro OHMI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 441-446
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SBT thin filmKr/O2 sputteringelectrical propertiesXRD
 Summary | Full Text:PDF

AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs
Shun-ichiro OHMI Mizuha HIROKI Yasutaka MAEDA 
Publication:   
Publication Date: 2019/02/01
Vol. E102-C  No. 2  pp. 138-142
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics and Biotechnology)
Category: 
Keyword: 
AuGebottom-contactpentaceneOFETlift-offyieldSPM cleaningPMA process
 Summary | Full Text:PDF

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
Yasutaka MAEDA Mizuha HIROKI Shun-ichiro OHMI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 323-327
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETbottom-contact electrodessurface treatmentelectron injection
 Summary | Full Text:PDF

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient
Sohya KUDOH Shun-ichiro OHMI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 328-333
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Hf-based MONOS structureECR plasma sputteringenduranceatomically flat Si surfaceAr/H2 ambient
 Summary | Full Text:PDF

PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
Shun-ichiro OHMI Yuya TSUKAMOTO Weiguang ZUO Yasushi MASAHIRO 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 311-316
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PdEr-alloy targetsilicideschottky barrier heightcontact resistivityRF magnetron sputtering
 Summary | Full Text:PDF

PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures
Shun-ichiro OHMI Mengyi CHEN Weiguang ZUO Yasushi MASAHIRO 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 458-462
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PdYb-silicidecontact resistivitySchottky barrier heightstacked layerRF magnetron sputtering
 Summary | Full Text:PDF

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
 Summary | Full Text:PDF

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 504-509
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessoxidation processsubstrate orientationMIS diode
 Summary | Full Text:PDF

PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity
Shun-ichiro OHMI Mengyi CHEN Xiaopeng WU Yasushi MASAHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 510-515
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PtHf-alloy targetPtHf-alloy silicidecontact resistivitySchottky barrier heightRF magnetron sputtering
 Summary | Full Text:PDF

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 535-540
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
LaB6OFETbottom-contactpentacenedendritic grainlamellar grain
 Summary | Full Text:PDF

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 402-405
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnesssacrificial oxidationTDDB
 Summary | Full Text:PDF

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidation1/f noiseTDDB
 Summary | Full Text:PDF

Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
Dae-Hee HAN Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 669-673
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidationEOT
 Summary | Full Text:PDF

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 885-890
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneOFETshigh-kgrain sizeHfON
 Summary | Full Text:PDF

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
Young-Uk SONG Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 767-770
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneC-Vhysteresispentacene based MOS diodes
 Summary | Full Text:PDF

Modulation of PtSi Work Function by Alloying with Low Work Function Metal
Jun GAO Jumpei ISHIKAWA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 775-779
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
PtSimonosilicidealloywork functionSWC-anneal
 Summary | Full Text:PDF

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels
Shun-ichiro OHMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 994-999
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
twin-channelself-alignSOIΩ-gateSiNwet etching
 Summary | Full Text:PDF

Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films
Shun-ichiro OHMI Tomoki KUROSE Masaki SATOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
electron cyclotron resonancesputteringplasma nitridationpostdeposition annealinghigh-kHfOxNy
 Summary | Full Text:PDF

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications
Takashi YAMAZAKI Shun-ichiro OHMI Shinya MORITA Hiroyuki OHRI Junichi MUROTA Masao SAKURABA Hiroo OMI Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 656-661
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
silicon on insulator (SOI) waferpatterned SOISiGeselective etchingMOSFET
 Summary | Full Text:PDF

Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
Shun-ichiro OHMI Go YAMANAKA Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 24-29
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κAlONECRsputteringoxidation
 Summary | Full Text:PDF