Shouhei SEKI


Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1052-1056
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN-HEMTscurrent collapseSi3N4 passivation filmNH3-plasma pretreatment
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1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems
Yasunori OGAWA Kuniichi IKEMURA Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 489-495
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAsDCFLSDHstandard cellnatural air-cooling
 Summary | Full Text:PDF

A GaAs 88 Self-Routing Switch LSI for ATM Switching System
Shouhei SEKI Hiroyuki YAMADA Masanori TSUNOTANI Yoshiaki SANO Yasushi KAWAKAMI Masahiro AKIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1127-1132
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAsB-ISDNATMhardware switch
 Summary | Full Text:PDF