Shoji YAMAHATA


Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
Norihide KASHIO Kenji KURISHIMA Yoshino K. FUKAI Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1084-1090
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
InP HBTspassivation ledgereliability
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High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2000-2006
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
InPHBTamplifierflip-flopPLL
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Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1171-1181
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBTMOVPEZn diffusionabrupt emittergraded basehot electron injectionnonequilibrium transportcurrent blocking effectlateral down-scalingemitter size effect
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Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2  pp. 186-192
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
InPInGaAsHBThigh-speedlow-power
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High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation
Shoji YAMAHATA Yutaka MATSUOKA Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1437-1443
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
heterojunction bipolar transistorcollector-up structurecarbon-doped baseoxygen-ion implantationmaximum oscillation frequency
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IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs
Yutaka MATSUOKA Shoji YAMAHATA Satoshi YAMAGUCHI Koichi MURATA Eiichi SANO Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1392-1401
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
heterojunction bipolar transistorself-aligned structureballistic collection transistorlaunchercutoff frequencymaximum oscillation frequencymultiplexerpreamplifierselectorfrequency divider
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