Shizunori MATSUMOTO


1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2  pp. 247-254
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
100 nm-MOSFET1/f noisemeasurementmodeling
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