Shirun HO


Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation
Shirun HO Yasuyuki OHKURA Takuya MARUIZUMI Prasad JOSHI Naoki NAKAMURA Shoichi KUBO Sigeo IHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 336-349
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
 Summary | Full Text:PDF(1.3MB)

Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems
Shirun HO Aya MORIYOSHI Isao OHBU Osamu KAGAYA Hiroshi MIZUTA Ken YAMAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 155-160
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
transconductancemobilityself-consistent and nonequilibrium screeningheavily doped systemsionized impurity scattering
 Summary | Full Text:PDF(640.3KB)

Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs
Shirun HO Masaki OOHIRA Osamu KAGAYA Aya MORIYOSHI Hiroshi MIZUTA Ken YAMAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 187-193
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
frequency dependent characteristicsdynamic simulationdeep trapsquasi-Fermi levelsGaAs MESFETs
 Summary | Full Text:PDF(703.1KB)