Shiro SAKAI


Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates
Tomoya SUGAHARA Shiro SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 598-604
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
dislocationhomoepitaxyheteroepitaxynonradiative recombination centerphase separationband-tail states
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Optical Properties of Bound Excitons and Biexcitons in GaN
Yoichi YAMADA Chiharu SASAKI Yohei YOSHIDA Satoshi KURAI Tsunemasa TAGUCHI Tomoya SUGAHARA Katsushi NISHINO Shiro SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 605-611
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
bound excitonbiexcitonZeeman splittingdiamagnetic shifttime-resolved luminescence
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Room Temperature Operation of InGaAsP/GaAs0.7P0.3 Double Heterostructure Oxide Stripe Lasers
Sadao FUJII Shiro SAKAI Masayoshi UMENO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 378-381
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Lasers and Related Devices
Keyword: 
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Optimum Designing of InGaAsP/InP Wavelength Demultiplexing Photodiodes
Shiro SAKAI Masayoshi UMENO Yoshifumi AMEMIYA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1980/03/25
Vol. E63-E  No. 3  pp. 192-197
Type of Manuscript:  PAPER
Category: Other Devices
Keyword: 
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