Shinji ODANAKA


A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
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A Design Hierarchy of IC Interconnects and Gate Patterns
Shinji ODANAKA Akio MISAKA Kyoji YAMASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 948-954
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADinterconnectOPCgate patterndesign rule
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A Two-Dimensional Analysis of Hot-Carrier Photoemission from LOCOS- and Trench-Isolated MOSFETs
Takashi OHZONE Hideyuki IWATA Yukiharu URAOKA Shinji ODANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11  pp. 1673-1682
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
CMOShot-carrierphotoemissionisolation
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Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup
Hideyuki IWATA Mitsuo YASUHIRA Shinji ODANAKA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1281-1290
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
heavy-ionCMOSlatchupsimulation
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A Three-Dimensional Simulation for the Dynamic Behavior of a Trench Capacitor dRAM Cell
Kaori MORIYAMA Shinji ODANAKA Youhei ICHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/06/25
Vol. E74-C  No. 6  pp. 1615-1620
Type of Manuscript:  Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)
Category: 
Keyword: 
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