Shinichi HOSHI


Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 686-690
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlGaN/GaN HEMTscurrent collapseSiNpassivation filmthermal CVD
 Summary | Full Text:PDF

Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1052-1056
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN-HEMTscurrent collapseSi3N4 passivation filmNH3-plasma pretreatment
 Summary | Full Text:PDF

The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction
Shinichi HOSHI Takayuki IZUMI Tomoyuki OHSHIMA Masanori TSUNOTANI Tamotsu KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1350-1355
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaAs/AlGaAs pseudomorphic high electron mobility transistorRIE-damagerecombination enhanced defect reaction
 Summary | Full Text:PDF